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Ordering number : ENA0687
CPH5856
SANYO Semiconductors
DATA SHEET
CPH5856
Features
*
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
DC / DC converters.
Features
*
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * 1.8V drive. [SBD] * Short reverse recovery time. * Low forward voltage. * Junction temperature 150C guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm20.8mm) 1unit 20 10 2.5 10 0.9 150 --55 to +150 V V A A W C C Symbol Conditions Ratings Unit
Marking : YJ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21407PE TI IM TC-00000403 No. A0687-1/6
CPH5856
Continued from preceding page.
Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +150 --55 to +150 V V A A C C Symbol Conditions Ratings Unit
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.2mA IF=0.5A IF=1A VR=7.5V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 15 0.44 0.51 20 10 0.49 0.56 3 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A IS=2.5A, VGS=0V 20 1 10 0.4 1.8 3.0 71 89 117 220 56 43 8.0 44 28 37 2.9 0.45 0.97 0.83 1.2 93 125 180 1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions
unit : mm (typ) 7017A-005
Electrical Connection
5
0.6
4
3
2.9
0.15
5
4
3
0.2
2.8
1.6
0.05
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
1 2
Top view
0.6
1
0.95
2
0.4
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.9
0.2
No. A0687-2/6
CPH5856
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
VIN 4V 0V VIN
VDD=10V
Duty10%
100mA
D
PW=10s D.C.1%
10s --5V
G
100mA
ID=1.5A RL=6.67 VOUT
50
100
10
trr
P.G
CPH5856 50
S
2.5
ID -- VDS
4.0V
V
[MOSFET]
=1. V GS 5V
3.0
ID -- VGS
VDS=10V
[MOSFET]
2.5
2.0
V
2.0
2.5
Drain Current, ID -- A
5.0V
Drain Current, ID -- A
1.5
6.0V
2.0
1.5
0.5
0.5
Ta= 75
C
1.0
0 0 0.1 0.2 0.3 0.4 0.5
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
250
Drain-to-Source Voltage, VDS -- V IT12032 RDS(on) -- VGS [MOSFET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m
250
Gate-to-Source Voltage, VGS -- V IT12033 RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
200
200
ID=0.5A
150
1.0A 1.5A
150
100
100
50
50
1.8V S= .5A, V G I D=0 =2.5V A, V GS I D=1.0 4.0V , V GS= I D=1.5A
0 0 2 4 6 8 IT12034
0 --60
--40
--20
0
20
40
60
25 C
80
--25C
1.0
8.0V
100
120
10mA
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
IT12035
No. A0687-3/6
CPH5856
10
yfs -- ID
[MOSFET] VDS=10V
Forward Transfer Admittance, yfs -- S
7 5 3 2
10 7 5 3 2
IS -- VSD
VGS=0V
[MOSFET]
Source Current, IS -- A
C 25
1.0 7 5 3 2 0.1 7 5
1.0 7 5 3 2
= Ta
C 5 --2
75
C
0.1 0.01
3 2 0.001 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Drain Current, ID -- A
5 3
5 7 10 IT12036 1000 7 5
0
0.2
0.4
--25 C
0.6
0.01 7 5
Ta= 75C
25C
3 2
0.8
1.0
1.2
SW Time -- ID
[MOSFET]
IT12037 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET]
Switching Time, SW Time -- ns
2 100 7 5 3 2 10 7 5 3 2
VDD=10V VGS=4V
Ciss, Coss, Crss -- pF
f=1MHz
3 2
Ciss
tr
td(off)
tf
100 7 5 3 2
td(on)
Coss
Crss
1.0 0.1
10 2 3 5 7 1.0 2 3 5
Drain Current, ID -- A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5
10 IT12038 2 10 7 5
7
0
2
4
6
8
10
12
14
16
18
20
VGS -- Qg
[MOSFET]
Drain-to-Source Voltage, VDS -- V IT12039 ASO [MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=2.5A
Drain Current, ID -- A
IDP=10A ID=2.5A
10
3 2 1.0 7 5 3 2 0.1 7 5 3 2
10s 10 1m 0s s
DC
m
op
er
10
ati on
s
0m
s (T a=
25
C )
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (600mm20.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
3.0 IT12040
0.01 0.01
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
M ou
Drain-to-Source Voltage, VDS -- V
IT12041
[MOSFET]
Allowable Power Dissipation, PD -- W
0.9 0.8
nt
ed
on
ac
0.6
er
am
ic
bo
ar
d
0.4
(6
00
m
m2 0.
8m
0.2
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT12042
No. A0687-4/6
CPH5856
3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VF
10000 1000
IR -- VR
Ta=150C 125C 100C
75C
Reverse Current, IR -- A
Forward Current, IF -- A
100 10 1.0 0.1 0.01
50C
25C
0C
--25C
3 2 0.001 0
Ta= 1
50 C 125 C 100 C 75C 50 C 25 C 0C --25 C
0.01 7 5
0.001 0.0001
0.1
0.2
0.3
0.4
0.5
0.6
0.7 IT11204
0
2
4
6
8
10
12
14
16
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.7
Rectangular wave
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
1.2E--0.5
IT11205
PR(AV) -- VRM
(1)
(2) (4) (3)
0.6 360
1.0E--0.5
0.5
Sine wave
0.4 180 0.3 360
8.0E--0.6
(1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave
VR 360
(1) (2) (3)
6.0E--0.6
Sine wave
VR 180 360
4.0E--0.6
0.2
0.1 0 0
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
0.2 0.4 0.6 0.8 1.0 1.2 IT11206
(4)
2.0E--0.6
0.0E+00 0 2 4 6 8 10 12 14 16
Average Output Current, IO -- A
160 140
Peak Reverse Voltage, VRM -- V
5 3 2
IT11207
Tc -- IO
C -- VR
120 100 80 60 40 20 0 0 0.2
*When mounted in reliability operaion board, Rth(J-a)=183.67C/W
Interterminal Capacitance, C -- pF
Case Temperature, Tc -- C
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
100 7 5 3 2
Rectangular wave
360
(4)
Sine wave
180 360 0.4 0.6
(1)
(2)
(3)
0.8
1.0
1.2 IT11208
10 0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
Average Output Current, IO -- A
3.5
IFSM -- t
IS
Reverse Voltage, VR -- V
IT10275
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
3.0
2.5
20ms t
2.0
1.5
1.0
0.5 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
ID00338
No. A0687-5/6
CPH5856
Note on usage : Since the CPH5856 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.
PS No. A0687-6/6

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